Tuneable IR detectors based on integration of InAsSbN and InAsN active layers

Researcher:
Prof. Gad Bahir | Electrical and Computer Engineering

Categories:

Physics and Electro-Optics | Security & Defense

The Technology

XBn and nBn detectors are based on InAs/AlAsSb/InAs and GaSb/AlAsSb/InAsSb respectively. A drastic reduction in band gap and ability to tune it is achieved by adding small, controlled amounts of nitrides. Nitrides are added to InAs to create InAsN and to InAsSb to create InAsSbN.

Advantages

  • Tunable bandgap
  • Extend cut-off wavelength over 305 microns

Applications and Opportunities

  • Multi spectral imaging for civil and military applications
  • Thermal imaging
arrow Business Development Contacts
Private: Dr. Neta Shomrat
Technology Development Manager