The Technology
XBn and nBn detectors are based on InAs/AlAsSb/InAs and GaSb/AlAsSb/InAsSb respectively. A drastic reduction in band gap and ability to tune it is achieved by adding small, controlled amounts of nitrides. Nitrides are added to InAs to create InAsN and to InAsSb to create InAsSbN.
Advantages
- Tunable bandgap
- Extend cut-off wavelength over 305 microns
Applications and Opportunities
- Multi spectral imaging for civil and military applications
- Thermal imaging
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