The Technology
Selective illumination using a scanning laser probe, is used to convert In2Se3 to In2O3, and achieved spatially resolved distinct optical and electrical properties. The method is used to design of coplanar P/N ferroelectric – semiconducting heterojunction. In addition, In2Se3 can be converted to In2O3 in contact areas to transform the metal-semiconductor junctions from Schottky to ohmic type and enhances the charge carrier mobility of the irradiated films by two orders of magnitude.
Coplanarity makes the device is a very sensitive photodetector, whilst coupling ferroelectric and semiconductor in the same junction allows “on/off” switching for non-volatile memory.
Advantages
- Efficient electrooptic device
- Minimized device size
- Very accurate positioning of the different layers
Applications and Opportunities
- Optical memories
- Sensitive optical sensors
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